A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

نویسندگان

چکیده

In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film coated n-Si using the spin coating technique.
 Ohmic rectifier contacts were by evaporation of indium (In) gold (Au) thermal system Au/ BODIPY-Pyridine/n-Si/In fabricated. Capacitance-voltage (C-V) conductance-voltage (G-V) measurements gained at different frequencies dark. Contingent frequency, series resistance (Rs) state density (Nss) values identified conductance Hill-Coleman method, respectively.

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ژورنال

عنوان ژورنال: Gazi Üniversitesi Fen Bilimleri dergisi

سال: 2023

ISSN: ['2147-9526']

DOI: https://doi.org/10.29109/gujsc.1246327